SI4833BDY-T1-GE3
Vishay Intertechnology, Inc.
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 4.6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE
- Surface MountYES
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Terminal FinishPURE MATTE TIN
- Number of Elements1
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)2.75
- Drain Current-Max (ID) (A)4.6
- Moisture Sensitivity Level1
- Operating Temperature-Max (Cel)150
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SI4833BDY-T1-GE3