SI4166DY-T1-GE3
VISHAY SILICONIX
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionTrans MOSFET N-CH 30V 30.5A 8-Pin SOIC N T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMS-012AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishPURE MATTE TIN
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)6.5
- Drain Current-Max (ID) (A)20.5
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)54
- DS Breakdown Voltage-Min (V)30
- Feedback Cap-Max (Crss) (pF)205
- Turn-off Time-Max (toff) (ns)95
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)45
- Pulsed Drain Current-Max (IDM) (A)70
- Drain-source On Resistance-Max (ohm)0.0039
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SI4166DY-T1-GE3