SI3900DV-T1-GE3 by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SI3900DV-T1-GE3

Lifecycle status
Discontinued
RoHS
RoHS compliant
REACH
REACH compliant
Description
Power Field-Effect Transistor, 2A I(D), 20V, 0.125ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-193C
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
0.83
Drain Current-Max (ID) (A)
2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
67
DS Breakdown Voltage-Min (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
37
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
8
Drain-source On Resistance-Max (ohm)
0.125
Screening Level / Reference Standard
IEC-61249-2-21
Time@Peak Reflow Temperature-Max (s)
30