SI3473DV-T1-GE3
Vishay Intertechnology, Inc.
- Lifecycle statusEOL
- RoHSRoHS compliant
- DescriptionMOSFET P-CH 12V 5.9A 6TSOP
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G6
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeMO-193AA
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Additional FeatureULTRA LOW RESISTANCE
- Number of Elements1
- Number of Terminals6
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)5.9
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)12
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max (ohm)0.023
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SI3473DV-T1-GE3