SI3456DV-T2
TEMIC SEMICONDUCTORS
- Lifecycle statusTransferred
- DescriptionPower Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)5.1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Pulsed Drain Current-Max (IDM) (A)20
- Drain-source On Resistance-Max (ohm)0.045
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SI3456DV-T2
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SI3456DV-T2