SI3443DV by Vishay Intertechnology, Inc. | Sourcengine

Vishay Intertechnology, Inc. SI3443DV

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 4.4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
TRENCH MOSFET
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
2
Drain Current-Max (ID) (A)
4.4
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
110
DS Breakdown Voltage-Min (V)
20
Turn-off Time-Max (toff) (ns)
180
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Pulsed Drain Current-Max (IDM) (A)
20
Drain-source On Resistance-Max (ohm)
0.065