SI3430DV-T1 by VISHAY SILICONIX | Sourcengine

VISHAY SILICONIX SI3430DV-T1

Lifecycle status
Discontinued
REACH
REACH compliant
Description
Power Field-Effect Transistor, 1.8A I(D), 100V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.14
Drain Current-Max (ID) (A)
1.8
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
40
DS Breakdown Voltage-Min (V)
100
Turn-off Time-Max (toff) (ns)
50
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
1.14
Pulsed Drain Current-Max (IDM) (A)
8
Drain-source On Resistance-Max (ohm)
0.17