SI2328DS
SILICONIX INC
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 1.15A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-236
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)0.73
- Drain Current-Max (ID) (A)1.15
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)28
- DS Breakdown Voltage-Min (V)100
- Turn-off Time-Max (toff) (ns)30
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)1.8
- Pulsed Drain Current-Max (IDM) (A)6
- Drain-source On Resistance-Max (ohm)0.25
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SI2328DS