SI2303DS
VISHAY SILICONIX
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 1.7A I(D), 30V, 0.24ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-236
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID)1.7 A
- DS Breakdown Voltage-Min30 V
- Transistor Element MaterialSILICON
- Drain-source On Resistance-Max0.24 ohm
- Pulsed Drain Current-Max (IDM)10 A
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SI2303DS