SHDG22610
SENSITRON SEMICONDUCTOR
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 7.7A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-CSFM-T3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)7.7
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Drain-source On Resistance-Max (ohm)0.58
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SHDG22610
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SHDG22610