SH8MA4TB1
ROHM Semiconductor
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionTrans MOSFET N/P-CH 30V 9A/8.5A 8-Pin SOP T/R
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationN and P-Channel
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL AND P-CHANNEL
- Moisture Sensitivity Level1
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Peak Reflow Temperature (Cel)260
- Avalanche Energy Rating (Eas) (mJ)5.7
- Pulsed Drain Current-Max (IDM) (A)18
- Drain-source On Resistance-Max (ohm)0.0325
- Time@Peak Reflow Temperature-Max (s)30
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SH8MA4TB1