SGW5N60RUFD by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. SGW5N60RUFD

Lifecycle status
Discontinued
Description
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Additional Feature
HIGH SPEED SWITCHING
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
27 ns
Turn-off Time-Nom (toff)
186 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
8 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V