SGP5N60RUF
Samsung Semiconductor, Inc.
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-220
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal PositionSINGLE
- Additional FeatureHIGH SPEED SWITCHING
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)27 ns
- Turn-off Time-Nom (toff)186 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)8 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
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SGP5N60RUF