SGM6901VU
Sumitomo Electric Industries, Ltd.
- Lifecycle statusActive
- RoHSRoHS compliant
- DescriptionRF Power Field-Effect Transistor, 2-Element, X Band, Gallium Nitride, N-Channel, High Electron Mobility FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-CDFP-F6
- ConfigurationCOMPLEX
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyHIGH ELECTRON MOBILITY
- Operating ModeDEPLETION MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals6
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeN-CHANNEL
- Highest Frequency BandX BAND
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)55
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SGM6901VU
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SGM6901VU