SGM2N60UFTF
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 2.4A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-G4
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Fall Time-Max (tf)250 ns
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)43 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)291 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)2.4 A
- Moisture Sensitivity Level1
- Power Dissipation-Max (Abs)2.1 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max6.5 V
- Collector-emitter Voltage-Max600 V
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SGM2N60UFTF