SGH15N120RUFD
FAIRCHILD SEMICONDUCTOR CORP
- Lifecycle statusDiscontinued
- DescriptionInsulated Gate Bipolar Transistor, 24A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Terminal PositionSINGLE
- Additional FeatureLOW CONDUCTION LOSS
- Fall Time-Max (tf)400 ns
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)90 ns
- Gate-emitter Voltage-Max25 V
- Turn-off Time-Nom (toff)280 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)24 A
- Power Dissipation-Max (Abs)72 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max7.5 V
- Collector-emitter Voltage-Max1200 V
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SGH15N120RUFD