SGFCF2002S-DT3 by Sumitomo Electric Industries, Ltd. | Sourcengine

Sumitomo Electric Industries, Ltd. SGFCF2002S-DT3

Lifecycle status
Discontinued
RoHS
RoHS compliant
Description
RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET
Category
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-N6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
S BAND
Transistor Element Material
GALLIUM NITRIDE
DS Breakdown Voltage-Min (V)
160
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED