SGF48N20
Solid State Devices, Inc.
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 48A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XBCC-N3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)25
- Drain Current-Max (ID) (A)48
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)200
- Feedback Cap-Max (Crss) (pF)2.3
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)200
- Drain-source On Resistance-Max (ohm)0.011
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SGF48N20