SGF30E100Z8UBTXV
Solid State Devices, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 15A I(D), 1000V, 0.19ohm, 2-Element, N-Channel, Gallium Nitride, Junction Cascode FET, TO-254
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-XDFM-P8
- ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-254
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyJUNCTION CASCODE
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements2
- Number of Terminals8
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)62
- Drain Current-Max (ID) (A)15
- Transistor Element MaterialGALLIUM NITRIDE
- DS Breakdown Voltage-Min (V)1000
- Feedback Cap-Max (Crss) (pF)5
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Pulsed Drain Current-Max (IDM) (A)58
- Drain-source On Resistance-Max (ohm)0.19
- Screening Level / Reference StandardMIL-PRF-19500
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