SFU2955 by Samsung Semiconductor, Inc. | Sourcengine

Samsung Semiconductor, Inc. SFU2955

Lifecycle status
Discontinued
Description
Power Field-Effect Transistor, 7.6A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
32
Drain Current-Max (ID) (A)
7.6
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
99
Pulsed Drain Current-Max (IDM) (A)
30
Drain-source On Resistance-Max (ohm)
0.3