SFS06R06GF
SUZHOU ORIENTAL SEMICONDUCTOR CO LTD
- Lifecycle statusContact Mfr
- RoHSRoHS compliant
- DescriptionPower Field-Effect Transistor, 70A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)70 A
- Transistor ApplicationSWITCHING
- Feedback Cap-Max (Crss)10.6 pF
- DS Breakdown Voltage-Min60 V
- Operating Temperature-Max150 Cel
- Operating Temperature-Min-55 Cel
- Power Dissipation-Max (Abs)87 W
- Transistor Element MaterialSILICON
- Avalanche Energy Rating (Eas)66 mJ
- Drain-source On Resistance-Max0.006 ohm
- Pulsed Drain Current-Max (IDM)210 A
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SFS06R06GF