SFL010C/39TXV
Solid State Devices, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 4A I(D), 60V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- ApplicationSWITCHING
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-39
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)15
- Drain Current-Max (ID) (A)4
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)70
- DS Breakdown Voltage-Min (V)60
- Feedback Cap-Max (Crss) (pF)60
- Turn-off Time-Max (toff) (ns)145
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)15
- Pulsed Drain Current-Max (IDM) (A)10
- Drain-source On Resistance-Max (ohm)0.85
- Screening Level / Reference StandardMIL-PRF-19500
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SFL010C/39TXV