SFF80N20PDBS
Solid State Devices, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 55A I(D), 200V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-259
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)55
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Avalanche Energy Rating (Eas) (mJ)1500
- Drain-source On Resistance-Max (ohm)0.03
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SFF80N20PDBS
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SFF80N20PDBS