SFF55N70S2DB
Solid State Devices, Inc.
- Lifecycle statusActive-Unconfirmed
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 70A I(D), 700V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-XBCC-N3
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleCHIP CARRIER Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionSOURCE
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)500
- Drain Current-Max (ID) (A)70
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)140
- DS Breakdown Voltage-Min (V)700
- Turn-off Time-Max (toff) (ns)340
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)2000
- Pulsed Drain Current-Max (IDM) (A)220
- Drain-source On Resistance-Max (ohm)0.05
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SFF55N70S2DB