SFF110P05MDBTXV by Solid State Devices, Inc. | Sourcengine

Solid State Devices, Inc. SFF110P05MDBTXV

Lifecycle status
Active-Unconfirmed
REACH
REACH compliant
Description
Power Field-Effect Transistor, 55A I(D), 50V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-XSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
90
Drain Current-Max (ID) (A)
55
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
120
DS Breakdown Voltage-Min (V)
50
Feedback Cap-Max (Crss) (pF)
650
Turn-off Time-Max (toff) (ns)
175
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
1000
Drain-source On Resistance-Max (ohm)
0.014
Screening Level / Reference Standard
MIL-19500