SEMIX603GB12E4IP
SEMIKRON INTERNATIONAL
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 1110A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-PUFM-X13
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, RESISTOR AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.05
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals13
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)345
- Gate-emitter Voltage-Max (V)20
- Turn-off Time-Nom (toff) (ns)705
- Collector Current-Max (IC) (A)1110
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.3
- Collector-emitter Voltage-Max (V)1200
- Screening Level / Reference StandardIEC-60747-1; UL RECOGNIZED
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SEMIX603GB12E4IP
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SEMIX603GB12E4IP