SEMIX603GAR12E4P by SEMIKRON INTERNATIONAL | Sourcengine

SEMIKRON INTERNATIONAL SEMIX603GAR12E4P

Lifecycle status
Active
REACH
REACH compliant
Description
Insulated Gate Bipolar Transistor, 1110A I(C), 1200V V(BR)CES, N-Channel
Category
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X11
Configuration
SINGLE WITH BUILT-IN DIODE AND THERMISTOR
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.05
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
11
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
240
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
670
Collector Current-Max (IC) (A)
1110
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
6.3
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
IEC-60747-1; UL RECOGNIZED