SEMIX303GB12E4S
SEMIKRON INTERNATIONAL
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 466A I(C), 1200V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationPOWER CONTROL
- JESD-30 CodeR-XUFM-X20
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- VCEsat-Max (V)2.05
- Case ConnectionISOLATED
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements2
- Number of Terminals20
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor Element MaterialSILICON
- Turn-on Time-Nom (ton) (ns)312
- Gate-emitter Voltage-Max (V)20
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Nom (toff) (ns)663
- Collector Current-Max (IC) (A)466
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-40
- Gate-emitter Thr Voltage-Max (V)6.5
- Collector-emitter Voltage-Max (V)1200
- Screening Level / Reference StandardIEC-60747-1; UL RECOGNIZED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SEMIX303GB12E4S