SDT55462
SOLITRON DEVICES INC
- Lifecycle statusActive-Unconfirmed
- DescriptionPower Bipolar Transistor, 30A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- VCEsat-Max1.5 V
- JESD-30 CodeO-MUPM-D3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-63
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormSOLDER LUG
- Case ConnectionCOLLECTOR
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- DC Current Gain-Min (hFE)8
- Collector Current-Max (IC)30 A
- Power Dissipation-Max (Abs)625 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max350 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max625 W
- Transition Frequency-Nom (fT)3 MHz
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SDT55462