SDF4NA100JABVGD1N
SOLITRON DEVICES INC
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeS-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)150
- Drain Current-Max (ID) (A)4.4
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)1000
- Operating Temperature-Max (Cel)150
- Pulsed Drain Current-Max (IDM) (A)17.6
- Drain-source On Resistance-Max (ohm)4
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SDF4NA100JABVGD1N