SDF430JABVHSB
SOLITRON DEVICES INC
- Lifecycle statusActive-Unconfirmed
- DescriptionPower Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeS-MSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Additional FeatureCUSTOM BENT LEAD OPTIONS ARE AVAILABLE
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)4.5 A
- Turn-on Time-Max (ton)40 ns
- DS Breakdown Voltage-Min500 V
- Turn-off Time-Max (toff)76 ns
- Operating Temperature-Max150 Cel
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max75 W
- Drain-source On Resistance-Max1.5 ohm
- Pulsed Drain Current-Max (IDM)15 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SDF430JABVHSB