SDF20N60JEDVHSN
SOLITRON DEVICES INC
- Lifecycle statusDiscontinued
- DescriptionPower Field-Effect Transistor, 20A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-259AA
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-259AA
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)20 A
- Turn-on Time-Max (ton)210 ns
- DS Breakdown Voltage-Min600 V
- Turn-off Time-Max (toff)325 ns
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)300 W
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max300 W
- Drain-source On Resistance-Max0.35 ohm
- Pulsed Drain Current-Max (IDM)80 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SDF20N60JEDVHSN