SDF17N60GAFXGU1B
SOLITRON DEVICES INC
- Lifecycle statusActive
- DescriptionPower Field-Effect Transistor, 17A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-MSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureCUSTOM BENT LEAD OPTIONS ARE AVAILABLE
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)17
- Transistor Element MaterialSILICON
- Turn-on Time-Max (ton) (ns)210
- DS Breakdown Voltage-Min (V)600
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Turn-off Time-Max (toff) (ns)325
- Operating Temperature-Max (Cel)150
- Power Dissipation Ambient-Max (W)300
- Pulsed Drain Current-Max (IDM) (A)68
- Drain-source On Resistance-Max (ohm)0.4
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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SDF17N60GAFXGU1B