SDF10N100GAFEHD1N
SOLITRON DEVICES INC
- Lifecycle statusActive-Unconfirmed
- DescriptionPower Field-Effect Transistor, 10A I(D), 1000V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.95
- SB Code8541.29.00.80
- JESD-30 CodeR-MSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- Terminal PositionSINGLE
- Additional FeatureHIGH RELIABILITY
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)10 A
- Turn-on Time-Max (ton)210 ns
- DS Breakdown Voltage-Min1000 V
- Turn-off Time-Max (toff)325 ns
- Operating Temperature-Max150 Cel
- Power Dissipation-Max (Abs)300 W
- Transistor Element MaterialSILICON
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Power Dissipation Ambient-Max300 W
- Drain-source On Resistance-Max1.2 ohm
- Pulsed Drain Current-Max (IDM)40 A
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
0 suppliers available to buy or to bid for SDF10N100GAFEHD1N
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
SDF10N100GAFEHD1N
Send an RFQ
SDF10N100GAFEHD1N