SD1495-3
Microsemi Corporation
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeR-XDFM-F6
- ConfigurationSINGLE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountYES
- Terminal FormFLAT
- J-STD-609 Codee0
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals6
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)10
- Power Dissipation-Max (W)100
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)9
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)30
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SD1495-3