- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-MUPM-P3
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- DLA QualificationNot Qualified
- Terminal PositionUPPER
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeNPN
- Highest Frequency BandULTRA HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)5
- Power Dissipation-Max (W)23
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)3
- Operating Temperature-Max (Cel)200
- Collector-emitter Voltage-Max (V)40
- Collector-base Capacitance-Max (pF)20
0 suppliers available to buy or to bid for SD1070
Send an RFQ
Send an RFQ Your RFQ will be directly sent to our expert: Pari
Send an RFQ
SD1070
Send an RFQ
SD1070