SD1014-06
Microsemi Corporation
- Lifecycle statusTransferred
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeO-PRFM-F4
- ConfigurationSINGLE
- JESD-609 Codee0
- Package ShapeROUND
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- Terminal FinishTIN LEAD
- Terminal PositionRADIAL
- Number of Elements1
- Number of Terminals4
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)5
- Operating Temperature-Max200 Cel
- Collector Current-Max (IC)2.5 A
- Power Dissipation-Max (Abs)31 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max18 V
- Transition Frequency-Nom (fT)175 MHz
- Collector-base Capacitance-Max85 pF
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SD1014-06
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SD1014-06