- Lifecycle statusDiscontinued
- DescriptionRF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- JESD-30 CodeO-PRPM-F4
- ConfigurationSINGLE
- Package ShapeROUND
- Package StylePOST/STUD MOUNT Meter
- Surface MountNO
- Terminal FormFLAT
- DLA QualificationNot Qualified
- Terminal PositionRADIAL
- Additional FeatureWITH EMITTER BALLASTING RESISTORS
- Number of Elements1
- Number of Terminals4
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeNPN
- Highest Frequency BandVERY HIGH FREQUENCY BAND
- DC Current Gain-Min (hFE)10
- Transistor Element MaterialSILICON
- Collector Current-Max (IC) (A)1
- Collector-emitter Voltage-Max (V)18
- Collector-base Capacitance-Max (pF)20
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