S29NS064J0PBAW000 by Cypress Semiconductor Corporation | Sourcengine

Cypress Semiconductor Corporation S29NS064J0PBAW000

Lifecycle status
Transferred
RoHS
RoHS compliant
REACH
REACH compliant
Description
Flash, 4MX16, 65ns, PBGA44
Category
Semiconductors Memory ICs Flash Memories FLASH

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.51
SB Code
8542.32.00.50

Type
NOR TYPE
Boot Block
TOP
Ready/Busy
YES
Technology
CMOS
Toggle Bit
YES
Width (mm)
8
Length (mm)
9.2
JESD-30 Code
R-PBGA-B44
Memory Width
16
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
FLASH
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE
Memory Organization
4MX16
Number of Functions
1
Number of Terminals
44
Sector Size (words)
8K,32K
Terminal Pitch (mm)
0.5
Access Time-Max (ns)
65
Number of Words Code
4M
Memory Density (bits)
67108864
Package Body Material
PLASTIC/EPOXY
Command User Interface
YES
Common Flash Interface
YES
Number of Sectors/Size
4,127
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
4194304
Programming Voltage (V)
1.8
Standby Current-Max (A)
4.0E-5
Supply Current-Max (mA)
60
Package Equivalence Code
BGA44,8X14,20
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25
Write Cycle Time-Max (tWC) (ms)
45
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED