S2301
ROHM Semiconductor
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 40A I(D), 1200V, 0.111ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeX-XXUC-N
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeUNSPECIFIED
- Package StyleUNCASED CHIP Meter
- Surface MountYES
- Terminal FormNO LEAD
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionUNSPECIFIED
- Number of Elements1
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)40
- Transistor Element MaterialSILICON CARBIDE
- DS Breakdown Voltage-Min (V)1200
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) (A)80
- Drain-source On Resistance-Max (ohm)0.111
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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S2301