RT3T66M by ISAHAYA ELECTRONICS CORP | Sourcengine

ISAHAYA ELECTRONICS CORP RT3T66M

Lifecycle status
Contact Mfr
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
Category
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.3
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN AND PNP
DC Current Gain-Min (hFE)
100
Power Dissipation-Max (W)
0.15
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.1
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
50
Power Dissipation Ambient-Max (W)
0.15
Transition Frequency-Nom (fT) (MHz)
200