RT1P434T2 by ISAHAYA ELECTRONICS CORP | Sourcengine

ISAHAYA ELECTRONICS CORP RT1P434T2

Lifecycle status
Contact Mfr
Description
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Category
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
0.3 V
JESD-30 Code
R-PDSO-F3
Configuration
SINGLE WITH BUILT-IN RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Additional Feature
BUILT IN BIAS RESISTOR RATIO IS 4.7
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
DC Current Gain-Min (hFE)
50
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.1 A
Power Dissipation-Max (Abs)
0.125 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
50 V
Transition Frequency-Nom (fT)
150 MHz