RT1P231S
Mitsubishi Electric Corp.
- Lifecycle statusDiscontinued
- DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ConfigurationSINGLE WITH BUILT-IN RESISTOR
- Additional FeatureBUILT-IN BIAS RESISTOR
- Number of Elements1
- Qualification StatusNot Qualified
- Polarity/Channel TypePNP
- DC Current Gain-Min (hFE)50
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)0.1 A
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max50 V
- Transition Frequency-Nom (fT)150 MHz
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RT1P231S
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RT1P231S