RS3E095BNTB
ROHM Semiconductor
- Lifecycle statusActive
- RoHSRoHS compliant
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 9.5A I(D), 30V, 0.0219ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID) (A)9.5
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)30
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Avalanche Energy Rating (Eas) (mJ)12.9
- Pulsed Drain Current-Max (IDM) (A)36
- Drain-source On Resistance-Max (ohm)0.0219
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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RS3E095BNTB