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RS1E350GNTB

ROHM Semiconductor

RS1E350GNTB Datasheet
ROHM Semiconductor RS1E350GNTB
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PDSO-F5
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • J-STD-609 Code
    e3
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Terminal Finish
    Tin (Sn)
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    5
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Drain Current-Max (ID) (A)
    35
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    30
  • Peak Reflow Temperature (Cel)
    260
  • Pulsed Drain Current-Max (IDM) (A)
    140
  • Drain-source On Resistance-Max (ohm)
    0.002
  • Time@Peak Reflow Temperature-Max (s)
    10

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RS1E350GNTB
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RS1E350GNTB