RM35N250HD
Rectron Semiconductor
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 35A I(D), 250V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PSSO-G2
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-263AB
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionSINGLE
- Number of Elements1
- Number of Terminals2
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)214
- Drain Current-Max (ID) (A)35
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)250
- Feedback Cap-Max (Crss) (pF)7.6
- Operating Temperature-Max (Cel)175
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)112
- Pulsed Drain Current-Max (IDM) (A)110
- Drain-source On Resistance-Max (ohm)0.064
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RM35N250HD
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RM35N250HD