RM2305BV
Rectron Semiconductor
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 3A I(D), 20V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-G3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeP-CHANNEL
- Power Dissipation-Max (W)1.7
- Drain Current-Max (ID) (A)3
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)20
- Feedback Cap-Max (Crss) (pF)190
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Power Dissipation Ambient-Max (W)1.7
- Pulsed Drain Current-Max (IDM) (A)15
- Drain-source On Resistance-Max (ohm)0.052
- Screening Level / Reference StandardAEC-Q101
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RM2305BV
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RM2305BV