RM180N60DF by Rectron Semiconductor | Sourcengine

Rectron Semiconductor RM180N60DF

Lifecycle status
Active
REACH
REACH compliant
Description
Power Field-Effect Transistor, 180A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Category
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-F8
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
8
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
150
Drain Current-Max (ID) (A)
180
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
185
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
306
Pulsed Drain Current-Max (IDM) (A)
720
Drain-source On Resistance-Max (ohm)
0.0023