RM100N60DF
Rectron Semiconductor
- Lifecycle statusActive
- REACHREACH compliant
- DescriptionPower Field-Effect Transistor, 45A I(D), 65V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeR-PDSO-F8
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormFLAT
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Terminal PositionDUAL
- Number of Elements1
- Number of Terminals8
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)74
- Drain Current-Max (ID) (A)45
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)65
- Feedback Cap-Max (Crss) (pF)56
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-55
- Avalanche Energy Rating (Eas) (mJ)31
- Pulsed Drain Current-Max (IDM) (A)340
- Drain-source On Resistance-Max (ohm)0.0046
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RM100N60DF
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RM100N60DF