RJP60F4DPQ-A0#T0
Renesas Electronics Corp.
- Lifecycle statusDiscontinued
- REACHREACH compliant
- DescriptionInsulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel
- Category
- ECCNEAR99
- ECCN GovernanceEAR
- Surface MountNO
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max30 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)60 A
- Power Dissipation-Max (Abs)235.8 W
- Gate-emitter Thr Voltage-Max8 V
- Collector-emitter Voltage-Max600 V
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RJP60F4DPQ-A0#T0